Part Number Hot Search : 
S360JC LBN09006 100N8 CP219 ENTATI LTC34 ILQ621 UN4115Q
Product Description
Full Text Search
 

To Download TS7988 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Ordering number :EN5959
NPN Triple Diffused Planar Silicon Transistor
TS7988
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
* High speed. * High breakdown voltage (VCBO=1600V). * High reliability (Adoption of HVP process). * Adoption of MBIT process.
Package Dimensions
unit:mm 2039D-TO3PML
[TS7988]
o3.4 16.0 5.6 3.1
5.0 8.0 21.0 22.0
4.0
2.8 2.0
2.0
20.4
1.0
0.6
1
2
3
5.45
5.45
1:Base 2:Collector 3:Emitter SANYO:TO-3PML
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25 C Tj Tstg Conditions Ratings 1600 800 6 10 25 3.0 70 150 -55 to +150 Unit V V V A A W W
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICBO ICES IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCE=800V, IE=0 VCE=1600V, RBE=0 800 1.0 15 4 30 7 5 1.5 3.0 0.2 V V s s VEB=4V, IC=0 VCE=5V, IC=1.0A VCE=5V, IC=7A IC=7A, IB=1.75A IC=7A, IB=1.75A IC=6A, IB1=1.0A, IB2=-2.5A IC=6A, IB1=1.0A, IB2=-2.5A Conditions Ratings min typ max 10 1.0 Unit A mA V mA
VCEO(sus) IC=100mA, IB=0
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1619 No.5959-1/3
3.5
2.0
TS7988
Switching Time Test Circuit
PW=20s DC1% INPUT RB VR 50 + 100F + 470F RL=33.3 IB1 IB2 OUTPUT
VBE=-2V
VCC=200V
10 9
I C - VCE
2.0A
10
I C - VBE
VCE =5V
1.8A
1.6A
1.4A
9
Collerctor Current, IC - A
7 6 5 4
1.2A 1.0A 0.8A
0.6A
Collerctor Current, IC - A
8
8 7 6 5
0.4A
20
2 1
2 1
IB=0
0 0 1 2 3 4 5 6 7 8 9 10
0 0
0.2
0.4
0.6
Ta= 1
3
3
0.8
-40 C
1.0
25C
0.2A
C
4
1.2
Collector-to-Emitter Voltage, VCE - V
100 7 5
Base-to-Emitter Voltage, VBE - V
10 I /I =5 7CB 5 3 2 1.0 7 5 3 2 0.1 7 5 120C 3 2 0.01 0.1
hFE - I C
VCE =5V
VCE(sat) - I C
Ta=120C
DC Current Gain, hFE
3
25C
2
-40C
10 7 5 3 2 1.0 0.1
Collector-to-Emitter Saturation Voltage, VCE(sat) - V
Ta=-40C
25C
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
1.0
2
3
5
7
10
Collector Current, IC - A
7 5
Collector Current, IC - A
10 7
SW Time - I C
Switching Time, SW Time - s
tstg
SW Time - I B2
tstg
Switching Time, SW Time - s
5 3 2 1.0 7 5 3 2
3 2
1.0 7 5 3 2
tf
tf
0.1 7 7
VCC = 200V, R load IC /IB1=6, IB2/IB1=2.5
0.1 2 3 5 7 1.0 2 3 5 7 10 2
VCC = 200V, R load 0.1 IC=6A, IB1=1A 7 7 0.1 2 3
5
7
1.0
2
3
5
7
10
Collector Current, IC - A
Base Current, IB2 - A
No.5959-2/3
TS7988
5 3 I CP 2
Forward Bias A S O
s 0 10
5 3 2
Reverse Bias A S O
Collector Current, IC - A
Collector Current, IC - A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5
IC
30
s 0
PC
=7
0W
10 7 5 3 2 1.0 7 5
1m
10 ms
s
DC op er at io n
Tc=25C
2 3 5 7 100 2
3 1pulse 2 3 5 7 10
3
5
7 1000
0.1 3
L=500H IB2=-3A 2 Tc=25C 1pulse
3 5 7 100 2 3 5 7 1000 2 3
Collector-to-Emitter Voltage, VCE - V
4.0
Collector-to-Emitter Voltage, VCE - V
80 70
P C - Ta
Collector Dissipation, PC - W
P C - Tc
Collector Dissipation, PC - W
3.0
60 50 40 30 20 10
No
2.0
he
at
sin
k
1.0
0 0
20
40
60
80
100
120
140
160
0 0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
Case Temperature, Tc - C
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1998. Specifications and information herein are subject to change without notice.
PS No.5959-3/3


▲Up To Search▲   

 
Price & Availability of TS7988

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X